Diagnose of radiation induced single event effects in a PLL using a heavy ion microbeam

Testing of single event effects caused by heavy ions in a PLL implemented on a CMOS 90 nm technology is reported in this work. The diagnosis of the circuit vulnerability has been conducted with a heavy ion micro beam line facility at the TANDAR tandem accelerator facility. The accuracy of the positioning system has been evaluated and the radiation dose has been accurately characterized. Single event effects were induced in the circuit and a map of the spatial correlation for the most sensitive blocks has been obtained.