基于130nm CMOS技术的低功耗低相位噪声MEMS兼容s波段振荡器设计

2010 Annual IEEE India Conference (INDICON) Pub Date : 2010-12-01 DOI:10.1109/INDCON.2010.5712587

A. Bhattacharya, T. K. Bhattacharyya

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引用次数: 3

摘要

本文讨论了一种兼容MEMS的低功耗、低相位噪声CMOS振荡器的设计细节。该VCO采用UMC 130 nm RFCMOS技术设计，用于多频段系统，在振荡频率偏移1 MHz时，低功耗为1.17 mW，相位噪声为- 117.78 dBc/Hz。振荡的中心频率选择为2.4 GHz，这是Zigbee应用的标准。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of a low-power low-phase noise MEMS compatible S-band oscillator in 130 nm CMOS technology

This paper discusses the design details of a MEMS compatible low-power, low-phase noise CMOS oscillator. The VCO was designed in UMC 130 nm RFCMOS technology for a multiband system with low power dissipation of 1.17 mW and low phase noise of −117.78 dBc/Hz at 1 MHz offset from the oscillation frequency. The centre frequency of oscillation was chosen to be 2.4 GHz which is a standard for Zigbee applications.

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2010 Annual IEEE India Conference (INDICON)

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