{"title":"高效倒量子点LED","authors":"Hyo‐Min Kim, Jin Jang","doi":"10.23919/am-fpd.2018.8437373","DOIUrl":null,"url":null,"abstract":"This paper reviews the performances of high efficiency quantum-dot light emitting diodes (QLEDs) for displays, such as external quantum efficiency (EQE), current efficiency (CE) and power efficiency (PE). The device structures and materials for hole and electron transport layers are also discussed. Especially, we have developed a new electron transport layer (ETL) of doped ZnO material. Using the ETL we have developed the inverted red (R-), green (G-) and blue (B-) QLEDs exhibiting the maximum current efficiencies of 20.3, 79.2 and 0.4 cd/A, respectively.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Efficiency Inverted Quantum-dot LED\",\"authors\":\"Hyo‐Min Kim, Jin Jang\",\"doi\":\"10.23919/am-fpd.2018.8437373\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews the performances of high efficiency quantum-dot light emitting diodes (QLEDs) for displays, such as external quantum efficiency (EQE), current efficiency (CE) and power efficiency (PE). The device structures and materials for hole and electron transport layers are also discussed. Especially, we have developed a new electron transport layer (ETL) of doped ZnO material. Using the ETL we have developed the inverted red (R-), green (G-) and blue (B-) QLEDs exhibiting the maximum current efficiencies of 20.3, 79.2 and 0.4 cd/A, respectively.\",\"PeriodicalId\":221271,\"journal\":{\"name\":\"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/am-fpd.2018.8437373\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/am-fpd.2018.8437373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper reviews the performances of high efficiency quantum-dot light emitting diodes (QLEDs) for displays, such as external quantum efficiency (EQE), current efficiency (CE) and power efficiency (PE). The device structures and materials for hole and electron transport layers are also discussed. Especially, we have developed a new electron transport layer (ETL) of doped ZnO material. Using the ETL we have developed the inverted red (R-), green (G-) and blue (B-) QLEDs exhibiting the maximum current efficiencies of 20.3, 79.2 and 0.4 cd/A, respectively.
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