{"title":"体效应诱导体型三栅极mosfet的变异性","authors":"Chun-Hsien Chiang, M. Fan, J. Kuo, P. Su","doi":"10.1109/VLSI-TSA.2012.6210130","DOIUrl":null,"url":null,"abstract":"We investigate and report the body-effect induced variability in Bulk tri-gate MOSFETs. Through 3-D atomistic simulation, the random dopant fluctuations in the Punch-Through-Stopper (PTS) region of Bulk tri-gate devices are examined. Our study indicates that to achieve an efficient threshold-voltage modulation through substrate bias, the high-doping PTS region may introduce excess variation in Bulk tri-gate devices. This effect has to be considered when one-to-one comparisons between Bulk tri-gate and SOI tri-gate regarding device variability are made.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Body effect induced variability in Bulk tri-gate MOSFETs\",\"authors\":\"Chun-Hsien Chiang, M. Fan, J. Kuo, P. Su\",\"doi\":\"10.1109/VLSI-TSA.2012.6210130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate and report the body-effect induced variability in Bulk tri-gate MOSFETs. Through 3-D atomistic simulation, the random dopant fluctuations in the Punch-Through-Stopper (PTS) region of Bulk tri-gate devices are examined. Our study indicates that to achieve an efficient threshold-voltage modulation through substrate bias, the high-doping PTS region may introduce excess variation in Bulk tri-gate devices. This effect has to be considered when one-to-one comparisons between Bulk tri-gate and SOI tri-gate regarding device variability are made.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210130\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Body effect induced variability in Bulk tri-gate MOSFETs
We investigate and report the body-effect induced variability in Bulk tri-gate MOSFETs. Through 3-D atomistic simulation, the random dopant fluctuations in the Punch-Through-Stopper (PTS) region of Bulk tri-gate devices are examined. Our study indicates that to achieve an efficient threshold-voltage modulation through substrate bias, the high-doping PTS region may introduce excess variation in Bulk tri-gate devices. This effect has to be considered when one-to-one comparisons between Bulk tri-gate and SOI tri-gate regarding device variability are made.
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