S.J. Lee, H. Luan, W. Bai, C. Lee, T. Jeon, Y. Senzaki, D. Roberts, D. Kwong
{"title":"高品质超薄CVD HfO/sub - 2/栅极堆与多晶硅栅极","authors":"S.J. Lee, H. Luan, W. Bai, C. Lee, T. Jeon, Y. Senzaki, D. Roberts, D. Kwong","doi":"10.1109/IEDM.2000.904252","DOIUrl":null,"url":null,"abstract":"We have developed and demonstrated an in-situ rapid thermal CVD (RTCVD) process for the fabrication of high quality ultra thin CVD HfO/sub 2/ gate stack that is compatible with conventional self-aligned poly-Si gate technology. These poly-Si gated HfO/sub 2/ gate stack show excellent interface properties, EOT=10.4 /spl Aring/, and leakage current Jg=0.23 mA/cm/sup 2/ @Vg=-1 V which is several orders of magnitude lower than RTO SiO/sub 2/ with poly-Si gate. In addition, the HfO/sub 2/ gate stack is thermally stable in direct contact with n/sup +/-poly Si gate under typical dopant activation conditions. These films also show excellent reliability under high-field electrical stress. We have also fabricated and demonstrated NMOSFETs, and studied boron penetration in HfO/sub 2/ gate stack with p/sup +/-poly Si gate.","PeriodicalId":276800,"journal":{"name":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"56","resultStr":"{\"title\":\"High quality ultra thin CVD HfO/sub 2/ gate stack with poly-Si gate electrode\",\"authors\":\"S.J. Lee, H. Luan, W. Bai, C. Lee, T. Jeon, Y. Senzaki, D. Roberts, D. Kwong\",\"doi\":\"10.1109/IEDM.2000.904252\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed and demonstrated an in-situ rapid thermal CVD (RTCVD) process for the fabrication of high quality ultra thin CVD HfO/sub 2/ gate stack that is compatible with conventional self-aligned poly-Si gate technology. These poly-Si gated HfO/sub 2/ gate stack show excellent interface properties, EOT=10.4 /spl Aring/, and leakage current Jg=0.23 mA/cm/sup 2/ @Vg=-1 V which is several orders of magnitude lower than RTO SiO/sub 2/ with poly-Si gate. In addition, the HfO/sub 2/ gate stack is thermally stable in direct contact with n/sup +/-poly Si gate under typical dopant activation conditions. These films also show excellent reliability under high-field electrical stress. We have also fabricated and demonstrated NMOSFETs, and studied boron penetration in HfO/sub 2/ gate stack with p/sup +/-poly Si gate.\",\"PeriodicalId\":276800,\"journal\":{\"name\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"56\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2000.904252\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2000.904252","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High quality ultra thin CVD HfO/sub 2/ gate stack with poly-Si gate electrode
We have developed and demonstrated an in-situ rapid thermal CVD (RTCVD) process for the fabrication of high quality ultra thin CVD HfO/sub 2/ gate stack that is compatible with conventional self-aligned poly-Si gate technology. These poly-Si gated HfO/sub 2/ gate stack show excellent interface properties, EOT=10.4 /spl Aring/, and leakage current Jg=0.23 mA/cm/sup 2/ @Vg=-1 V which is several orders of magnitude lower than RTO SiO/sub 2/ with poly-Si gate. In addition, the HfO/sub 2/ gate stack is thermally stable in direct contact with n/sup +/-poly Si gate under typical dopant activation conditions. These films also show excellent reliability under high-field electrical stress. We have also fabricated and demonstrated NMOSFETs, and studied boron penetration in HfO/sub 2/ gate stack with p/sup +/-poly Si gate.
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