窄间隙引起附加微环损耗的分析

Kaung-Cheng Lin, Wei-Lun Chang, Ruei Hao You, Yung-Jui Chen
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引用次数: 0

摘要

利用二维时域有限差分法(FDTD)和有效指数法(EIM)分析了单环全通滤波器结构中耦合间隙相关的微环损耗。我们采用了一种新的分析方案,将传输信号作为输入波长的函数来计算,并使用象象学环损耗参数拟合传输光谱。该方案绕过了复杂的波导模式分析过程,使耦合间隙小,全通耦合区域变成多模。当耦合隙宽度达到200 nm及以下时,辐射损耗随耦合隙宽度的减小而迅速增加。我们的初步结果表明,半径为2.5μm的硅微环(在氧化物上)的本征弯曲损耗约为3dB/cm。耦合间隙为150 nm时,微环的总损耗达到21.82dB/cm。
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Analysis of narrow gap induced additional micro-ring loss
We have analyzed the coupling gap dependent micro-ring loss in a single ring all-pass filter configuration using the two dimension (2D) finite difference time domain (FDTD) and EIM (effective index method). We utilized a new analysis scheme by calculating the transmission signal as a function of input wavelength and fitting the transmission spectrum with a phenomenological ring loss parameter. This novel scheme circumvents the complex waveguide mode analysis process, when the coupling gap is small and the all-pass coupling region becomes multi-mode. We find that the radiation loss increases rapidly with decreasing coupling gap width when the gap reaches 200 nm or below. Our initial results show that the intrinsic bending loss of a silicon micro-ring (on oxide) with a radius of 2.5μm is about 3dB/cm. The total loss of the micro-ring with 150 nm coupling gap reaches 21.82dB/cm.
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