熔融二氧化硅表面在351nm处的多脉冲降解

S. Ly, T. Laurence, N. Shen, B. Hollingsworth, M. Norton, J. Bude
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引用次数: 0

摘要

我们研究了暴露在351nm下的熔融二氧化硅表面的多脉冲降解,脉冲影响大于10j /cm2。在真空中,在低脉冲强度下,传输损耗随发射次数的增加而增加。但随着脉冲强度的增大,传输损耗减小,超过一定强度时传输损耗不可测量。传输损耗在较短波长测量时最高,向红外方向减小。吸收是导致传输损失的主要机制,是由二氧化硅表面的光还原引起的。
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Multipulse degradation of fused silica surfaces at 351 nm
We investigate the multipulse degradation of fused silica surfaces exposed at 351 nm for up to 109 pulses at pulse fluences greater than 10 J/cm2. In vacuum, the transmission loss increases as a function of the number of shots at low pulse intensity. However, as the pulse intensity increases, the transmission loss decreases and is not measureable above a certain intensity. Transmission loss is highest when measured at shorter wavelengths, and decreases towards the IR. Absorption is the primary mechanism that leads to transmission loss and is from photo-reduction of the silica surface.
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