沟槽屏蔽平面栅极IGBT (TSPG-IGBT)具有低损耗和强大的短路能力

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694390

Jun Hu, M. Bobde, H. Yilmaz, A. Bhalla

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引用次数: 19

摘要

本文提出了一种沟槽屏蔽平面栅极IGBT。独特的3D顶层电池结构，结合了高密度沟槽和低沟道密度，提供了出色的传导与开关损耗权衡，以及与沟槽iegt相比更好的短路SOA。对制造器件的测量表明，相同Eoff的VCESAT降低了0.1V，短路SOA提高了2倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Trench shielded planar gate IGBT (TSPG-IGBT) for low loss and robust short-circuit capalibity

A trench shielded planar gate IGBT is proposed in this paper. The unique 3D top cell structure, combining high density trench and low channel density, offers an excellent conduction vs. switching loss trade-off and a significantly better Short-circuit SOA compared to trench IEGTs. Measurements on fabricated devices show a 0.1V lower VCESAT for the same Eoff, and a 2x improvement in short circuit SOA.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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