PTAT CMOS电流源温度不匹配

A. Aita, C. Rodrigues
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引用次数: 3

摘要

比例绝对温度(PTAT) CMOS电流源广泛应用于温度传感器、带隙参考和其他温度补偿电路中。这些应用大多强烈依赖于用一组1+m PTAT电流源建立的电流比m的准确性。然而,PTAT CMOS电流源具有温度依赖的偏置点,这反过来又对CMOS电流源的失配产生了众所周知的影响。本文分析了PTAT电流源偏置点(gm/IDS)随温度(-55°C至125°C)变化而产生的失配特性。分析后,本文给出了一个没有失配补偿的精密温度传感器的测量结果,以证实所进行的分析。
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PTAT CMOS current sources mismatch over temperature
Proportional to Absolute Temperature (PTAT) CMOS current sources are widely used in temperature sensors, bandgap references, and other temperature-compensating circuits. Most of these applications strongly rely on the accuracy of a current ratio m established with a set of 1+m PTAT current sources. However, a PTAT CMOS current source has a temperature-dependent bias point, which in turn, has a well-known effect on the mismatch of CMOS current sources. This paper analyzes the mismatching properties of PTAT current sources due to variation of the current-sources bias point (gm/IDS) with temperature, from -55°C to 125°C. After the analysis, the paper shows measurements of a precision temperature sensor without mismatch compensation to corroborate the analysis developed.
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