{"title":"窄线宽复合腔半导体激光器特性研究","authors":"Weizhong Li, Zhihui Xu, Hao Lv","doi":"10.1109/SOPO.2012.6270932","DOIUrl":null,"url":null,"abstract":"In this paper, a new type compound cavity semiconductor laser is designed and the several important parameters, such as threshold gain, coupling efficiency, surface reflectivity and composite cavity length, are discussed. Research results indicate the narrow linewidth semiconductor laser compound cavity can be achieved narrow linewidth 10-4.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Research on the Characteristics of Compound Cavity Semiconductor Laser with Narrow Linewidth\",\"authors\":\"Weizhong Li, Zhihui Xu, Hao Lv\",\"doi\":\"10.1109/SOPO.2012.6270932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new type compound cavity semiconductor laser is designed and the several important parameters, such as threshold gain, coupling efficiency, surface reflectivity and composite cavity length, are discussed. Research results indicate the narrow linewidth semiconductor laser compound cavity can be achieved narrow linewidth 10-4.\",\"PeriodicalId\":159850,\"journal\":{\"name\":\"2012 Symposium on Photonics and Optoelectronics\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2012.6270932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2012.6270932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Research on the Characteristics of Compound Cavity Semiconductor Laser with Narrow Linewidth
In this paper, a new type compound cavity semiconductor laser is designed and the several important parameters, such as threshold gain, coupling efficiency, surface reflectivity and composite cavity length, are discussed. Research results indicate the narrow linewidth semiconductor laser compound cavity can be achieved narrow linewidth 10-4.
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