High Performance Sol-gel Processed SnO2 thin film transistor with sol-gel processed ZrO2 layers

We propose an effective process for the enhancement of electrical performance in solution-processed SnO2-based oxide thin-film transistors (TFTs) by adding a ZrO2layer on the active layer. The ZrO2layer was spin coated on the SnO2film with a single coating and double coating process under the same condition. The SnO2 TFTs with double-coated ZrO2 layers showed a saturation mobility of 51.2 cm²/Vs, which was more than four times higher than that of conventional SnO2 TFTs. Furthermore, the subthreshold slope reduced from 1.17 V /decade to 0.36 V /decade for SnO2 TFTs with double-coated ZrO2 layers. These results are attributed to the electron transfer based on the theory of electron donation from high-k dielectrics to oxide semiconductors.