差动互补哈特利CMOS压控振荡器

S. Jang, Heng-Fa Teng, Wei-Hao Lee, Chia-Wei Chang
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引用次数: 1

摘要

本文提出了一种新型互补低相位噪声差分CMOS哈特利压控振荡器(VCO),该振荡器仅使用电源电压和调谐电压作为偏置。该低噪声CMOS压控振荡器采用台积电0.18 um 1P6M多晶CMOS技术实现。VCO工作频率为5.49 GHz至6.29 GHz,调谐范围为13.58%。在5.65 GHz时,测量到的1 mhz偏置相位噪声为-118.42 dBc/Hz。VCO核心功耗为1.694 mW。该压控振荡器的芯片面积为0.529 × 0.674 mm2,性能因数为-191.09 dBc/Hz。在电源电压为1.1V时,铁芯电流为1.54 mA,铁芯功耗为1.694 mW。
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A differential complementary hartley CMOS voltage controlled oscillator
This letter presents a novel complementary low phase noise differential CMOS Hartley voltage-controlled oscillator (VCO), which uses only the supply voltage and the tuning voltage as the biases. The low noise CMOS VCO has been implemented with the TSMC 0.18 um 1P6M polycide CMOS technology. The VCO operates from 5.49 GHz to 6.29 GHz with 13.58% tuning range. The measured phase noise at 1-MHz offset is -118.42 dBc/Hz at 5.65 GHz. The power consumption of the VCO core is 1.694 mW. The VCO occupies a chip area of 0.529 × 0.674 mm2 and provides a figure of merit of -191.09 dBc/Hz. At the supply voltage of 1.1V, the core current of 1.54 mA, the core power consumption is 1.694 mW.
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