Impact of Gate All Around Architecture in Polarity Based TFET with RF/Analog Analysis

In today’s scenario, a versatile device to minimise power consumption in resource constraint IoT applications are on high demand. Focusing this, we demonstrate a nanowire TFET device comprising of a gate all around structure for better gate controllability and hetero dielectric as gate oxide. Presented high-k oxide at source side provides a high ON-current i.e. 4.28× 1$0^{-5}$A/$\mu$m and threshold voltage i.e. 0.3 V, which follows ITRS norms for low power devices. Additionally, instead of fundamental doped device, polarity-based concept is incorporated to provide immunity against RDFs and RF analysis is performed to judge its capability for wireless communication and RFIC applications; in which high cutoff frequency of 0.6 PHz and GBP of 60 THz are effectively obtained. Along with this, a high switching speed is also obtained, which is very much preferable for digital as well as analog applications.