{"title":"BiCMOS栅极延迟分析包括温度效应和大电流瞬态","authors":"J. Yuan, K. Pham","doi":"10.1109/SECON.1992.202331","DOIUrl":null,"url":null,"abstract":"The model accounts for high electric field effect in the nMOS transistor and high current effects in the bipolar transistor for a wide temperature range. The analytical equations provide evaluation of the sensitivity of process and device parameters on circuit performance at different temperatures. Computer simulation results of a BiCMOS driver using the present analysis are compared with PISCES simulation in support of physical reasoning.<<ETX>>","PeriodicalId":230446,"journal":{"name":"Proceedings IEEE Southeastcon '92","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"BiCMOS gate delay analysis including temperature effect and high current transients\",\"authors\":\"J. Yuan, K. Pham\",\"doi\":\"10.1109/SECON.1992.202331\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The model accounts for high electric field effect in the nMOS transistor and high current effects in the bipolar transistor for a wide temperature range. The analytical equations provide evaluation of the sensitivity of process and device parameters on circuit performance at different temperatures. Computer simulation results of a BiCMOS driver using the present analysis are compared with PISCES simulation in support of physical reasoning.<<ETX>>\",\"PeriodicalId\":230446,\"journal\":{\"name\":\"Proceedings IEEE Southeastcon '92\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Southeastcon '92\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1992.202331\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Southeastcon '92","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1992.202331","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
BiCMOS gate delay analysis including temperature effect and high current transients
The model accounts for high electric field effect in the nMOS transistor and high current effects in the bipolar transistor for a wide temperature range. The analytical equations provide evaluation of the sensitivity of process and device parameters on circuit performance at different temperatures. Computer simulation results of a BiCMOS driver using the present analysis are compared with PISCES simulation in support of physical reasoning.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
