用Ga-Sn-O薄膜室温制备可变电阻存储器

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI:10.23919/AM-FPD.2018.8437408

Sumio Sugiski, Ayata Kurasaki, R. Tanaka, T. Matsuda, M. Kimura

{"title":"用Ga-Sn-O薄膜室温制备可变电阻存储器","authors":"Sumio Sugiski, Ayata Kurasaki, R. Tanaka, T. Matsuda, M. Kimura","doi":"10.23919/AM-FPD.2018.8437408","DOIUrl":null,"url":null,"abstract":"Variable Resistive Memorys (VRMs) are promising devices with many advantages such as simple structure, high speed, etc. Amorphous oxide semiconductors (AOS) thin films have been used for many electric devices. In this presentation, we propose a new AOS, Ga-Sn-O (GTO) thin film for a VRM. We fabricated the VRM active layer using GTO and electrodes using aluminum. The Al/GTO/Al cell VRM showed the bipolar switching characteristic of a switching voltage (~2.0 V), ON/OFF ratio ~10) and reproducibility (~50).","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Room Temperature Fabrication of Variable Resistive Memory Using Ga-Sn-O Thin Film\",\"authors\":\"Sumio Sugiski, Ayata Kurasaki, R. Tanaka, T. Matsuda, M. Kimura\",\"doi\":\"10.23919/AM-FPD.2018.8437408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Variable Resistive Memorys (VRMs) are promising devices with many advantages such as simple structure, high speed, etc. Amorphous oxide semiconductors (AOS) thin films have been used for many electric devices. In this presentation, we propose a new AOS, Ga-Sn-O (GTO) thin film for a VRM. We fabricated the VRM active layer using GTO and electrodes using aluminum. The Al/GTO/Al cell VRM showed the bipolar switching characteristic of a switching voltage (~2.0 V), ON/OFF ratio ~10) and reproducibility (~50).\",\"PeriodicalId\":221271,\"journal\":{\"name\":\"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/AM-FPD.2018.8437408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2018.8437408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

可变电阻存储器(VRMs)具有结构简单、速度快等优点，是一种很有发展前途的器件。非晶氧化物半导体(AOS)薄膜已被用于许多电子器件。在本报告中，我们提出了一种新的AOS, Ga-Sn-O (GTO)薄膜用于VRM。我们用GTO和铝电极制备了VRM有源层。Al/GTO/Al电池VRM具有双极开关特性，开关电压为~2.0 V, ON/OFF比为~10，重现性为~50。

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Room Temperature Fabrication of Variable Resistive Memory Using Ga-Sn-O Thin Film

Variable Resistive Memorys (VRMs) are promising devices with many advantages such as simple structure, high speed, etc. Amorphous oxide semiconductors (AOS) thin films have been used for many electric devices. In this presentation, we propose a new AOS, Ga-Sn-O (GTO) thin film for a VRM. We fabricated the VRM active layer using GTO and electrodes using aluminum. The Al/GTO/Al cell VRM showed the bipolar switching characteristic of a switching voltage (~2.0 V), ON/OFF ratio ~10) and reproducibility (~50).

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2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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