S. Okamoto, M. Nishida, T. Shindo, Y. Komatsu, S. Yasue, M. Kaneiwa, T. Nanmori
{"title":"具有后微接触c-Si//spl μ /c-Si:H异质结构的23.5%高效硅太阳能电池","authors":"S. Okamoto, M. Nishida, T. Shindo, Y. Komatsu, S. Yasue, M. Kaneiwa, T. Nanmori","doi":"10.1109/PVSC.1997.654077","DOIUrl":null,"url":null,"abstract":"To obtain high efficiency silicon solar cells, we have investigated the rear heterostructure comprising a p-type single crystalline silicon (c-Si) substrate and a highly boron doped (p/sup +/) hydrogenated microcrystalline silicon (/spl mu/c-Si:H) film. This heterostructure was formed by rear micro contacts where a SiO/sub 2/ film was opened on the rear surface of the substrate. Voc was improved by an effective BSF using this heterostructure. With optimal design of finger electrode patterns, a conversion efficiency of 23.5% (AM1.5, 25/spl deg/C, 100 mW/cm/sup 2/) was obtained for a single crystalline silicon solar cell in 5/spl times/5 cm/sup 2/ area.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"196 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"23.5% efficient silicon solar cell with rear micro contacts of c-Si//spl mu/c-Si:H heterostructure\",\"authors\":\"S. Okamoto, M. Nishida, T. Shindo, Y. Komatsu, S. Yasue, M. Kaneiwa, T. Nanmori\",\"doi\":\"10.1109/PVSC.1997.654077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To obtain high efficiency silicon solar cells, we have investigated the rear heterostructure comprising a p-type single crystalline silicon (c-Si) substrate and a highly boron doped (p/sup +/) hydrogenated microcrystalline silicon (/spl mu/c-Si:H) film. This heterostructure was formed by rear micro contacts where a SiO/sub 2/ film was opened on the rear surface of the substrate. Voc was improved by an effective BSF using this heterostructure. With optimal design of finger electrode patterns, a conversion efficiency of 23.5% (AM1.5, 25/spl deg/C, 100 mW/cm/sup 2/) was obtained for a single crystalline silicon solar cell in 5/spl times/5 cm/sup 2/ area.\",\"PeriodicalId\":251166,\"journal\":{\"name\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"volume\":\"196 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1997.654077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
23.5% efficient silicon solar cell with rear micro contacts of c-Si//spl mu/c-Si:H heterostructure
To obtain high efficiency silicon solar cells, we have investigated the rear heterostructure comprising a p-type single crystalline silicon (c-Si) substrate and a highly boron doped (p/sup +/) hydrogenated microcrystalline silicon (/spl mu/c-Si:H) film. This heterostructure was formed by rear micro contacts where a SiO/sub 2/ film was opened on the rear surface of the substrate. Voc was improved by an effective BSF using this heterostructure. With optimal design of finger electrode patterns, a conversion efficiency of 23.5% (AM1.5, 25/spl deg/C, 100 mW/cm/sup 2/) was obtained for a single crystalline silicon solar cell in 5/spl times/5 cm/sup 2/ area.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
