K. Pan, E. Shin, Kelvin Freeman, Weisong Wang, Dustin Brown, G. Subramanyam
{"title":"二氧化钒薄膜系列单极单投开关","authors":"K. Pan, E. Shin, Kelvin Freeman, Weisong Wang, Dustin Brown, G. Subramanyam","doi":"10.1109/NAECON.2014.7045763","DOIUrl":null,"url":null,"abstract":"Vanadium dioxide (VO2) thin films have unique insulator to metal transition above the critical temperature of 72 °C. In this research, VO2 thin films were deposited on a sapphire substrate for thermally controllable RF/microwave switching devices with integrated heating coil. The VO2 thin film based devices showed insulator performance at room temperature and metallic state (low resistive phase) at 80 °C. Switching devices designed using a VO2 series varistor showed good isolation (<; -30 dB) and low insertion loss (> -5 dB) up to 20 GHz.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Vanadium dioxide thin film series single-pole single throw switch\",\"authors\":\"K. Pan, E. Shin, Kelvin Freeman, Weisong Wang, Dustin Brown, G. Subramanyam\",\"doi\":\"10.1109/NAECON.2014.7045763\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vanadium dioxide (VO2) thin films have unique insulator to metal transition above the critical temperature of 72 °C. In this research, VO2 thin films were deposited on a sapphire substrate for thermally controllable RF/microwave switching devices with integrated heating coil. The VO2 thin film based devices showed insulator performance at room temperature and metallic state (low resistive phase) at 80 °C. Switching devices designed using a VO2 series varistor showed good isolation (<; -30 dB) and low insertion loss (> -5 dB) up to 20 GHz.\",\"PeriodicalId\":318539,\"journal\":{\"name\":\"NAECON 2014 - IEEE National Aerospace and Electronics Conference\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"NAECON 2014 - IEEE National Aerospace and Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAECON.2014.7045763\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON.2014.7045763","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vanadium dioxide thin film series single-pole single throw switch
Vanadium dioxide (VO2) thin films have unique insulator to metal transition above the critical temperature of 72 °C. In this research, VO2 thin films were deposited on a sapphire substrate for thermally controllable RF/microwave switching devices with integrated heating coil. The VO2 thin film based devices showed insulator performance at room temperature and metallic state (low resistive phase) at 80 °C. Switching devices designed using a VO2 series varistor showed good isolation (<; -30 dB) and low insertion loss (> -5 dB) up to 20 GHz.
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