L. Gelczuk, G. Józwiak, M. Dąbrowska-szata, D. Radziewicz
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Dislocation in lattice-mismatched InGaAs/GaAs heterostructures as a factor of optoelectronic device degradation
In this paper, two deep electron traps (E1 or the extended defect and E2 or the point defect) have been detected in partially relaxed InGaAs/GaAs heterostructure by means of deep level transient spectroscopy (DLTS) technique
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