{"title":"TOF-SIMS测量栅极氧化氮簇离子的研究","authors":"H. Teo, Yun Wang, Z. Mo","doi":"10.1109/IPFA.2018.8452579","DOIUrl":null,"url":null,"abstract":"Measurement of the nitrogen in ultrathin gate oxide is important for the precise control of gate oxide quality in the FEOL manufacturing process. TOF-SIMS is one of the most capable analysis tools for the nitrogen distribution in the bulk of gate oxide and substrate interface, nitrogen concentration as well as dose measurement. However, there are many cluster ions formed during primary ion bombardment and subsequently captured in the mass spectrometry. Some discrepancy during data analysis was possibly observed for certain cluster ions. In this paper, the ion cluster for the characterization of nitrogen in the gate oxide will be discussed and demonstrated in one of the actual applications in manufacturing control process.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study of the Cluster Ion for Gate Oxide Nitrogen Measurement by TOF-SIMS\",\"authors\":\"H. Teo, Yun Wang, Z. Mo\",\"doi\":\"10.1109/IPFA.2018.8452579\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Measurement of the nitrogen in ultrathin gate oxide is important for the precise control of gate oxide quality in the FEOL manufacturing process. TOF-SIMS is one of the most capable analysis tools for the nitrogen distribution in the bulk of gate oxide and substrate interface, nitrogen concentration as well as dose measurement. However, there are many cluster ions formed during primary ion bombardment and subsequently captured in the mass spectrometry. Some discrepancy during data analysis was possibly observed for certain cluster ions. In this paper, the ion cluster for the characterization of nitrogen in the gate oxide will be discussed and demonstrated in one of the actual applications in manufacturing control process.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452579\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of the Cluster Ion for Gate Oxide Nitrogen Measurement by TOF-SIMS
Measurement of the nitrogen in ultrathin gate oxide is important for the precise control of gate oxide quality in the FEOL manufacturing process. TOF-SIMS is one of the most capable analysis tools for the nitrogen distribution in the bulk of gate oxide and substrate interface, nitrogen concentration as well as dose measurement. However, there are many cluster ions formed during primary ion bombardment and subsequently captured in the mass spectrometry. Some discrepancy during data analysis was possibly observed for certain cluster ions. In this paper, the ion cluster for the characterization of nitrogen in the gate oxide will be discussed and demonstrated in one of the actual applications in manufacturing control process.
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