片上全局总线的驱动程序预强调技术

L. Zhang, John M. Wilson, R. Bashirullah, L. Luo, Jian Xu, P. Franzon
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引用次数: 17

摘要

采用TSMC 0.25/spl mu/m技术的10mm长母线,与传统的中继器插入技术相比,采用带驱动器预强调技术的电流传感差分母线,功耗降低26.0% ~ 51.2%,峰值电流降低63.8%。该架构将最差耦合电容与总电容之比降低至14.4%。它只需要比16位总线的单端设计多7.9%的总线路由面积,并且节省了所有中继器放置阻塞。为了进一步验证驱动器预强调技术也可以应用于电压型单端总线,制作了台积电0.18/spl mu/m技术的测试芯片并进行了测试。
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Driver pre-emphasis techniques for on-chip global buses
By using current-sensing differential buses with driver pre-emphasis techniques, power dissipation is reduced by 26.0%-51.2% and peak current is reduced by 63.8%, compared to conventional repeater insertion techniques, for 10mm long buses in TSMC 0.25/spl mu/m technology. This proposed architecture lowers the worst coupling capacitance to total capacitance ratio to 14.4%. It only requires 7.9% more bus routing area than single-ended designs for a 16-bit bus, and saves all of the repeater placement blockages. To further verify that the driver pre-emphasis techniques can also be applied to voltage-mode single-ended buses, a test chip in TSMC 0.18/spl mu/m technology was fabricated and measured.
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