纯和掺脲KDP单晶的直流电导率和激光损伤阈值

2010 10th International Conference on Laser and Fiber-Optical Networks Modeling Pub Date : 2010-11-09 DOI:10.1109/LFNM.2010.5624222

A. Levchenko, I. Pritula, A. Kosinova, M. Kolybayeva, V. B. Tyutyunnik, A. V. Krivtsov, A. Starikov, A. P. Gavrik

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引用次数: 0

摘要

研究了纯KH2PO4晶体和尿素掺杂KH2PO4晶体的直流电导率和激光损伤阈值。研究发现，电导率低的晶体具有较高的激光损伤阈值。结果表明，在含尿素水溶液中生长晶体，实现了晶体电阻率和激光损伤阈值的提高。尿素在溶液中的最佳摩尔值为0.1 ~ 1 M。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical dc conductivity and laser damage threshold of pure and urea-doped KDP single crystals

Electrical dc conductivity and laser damage threshold of pure and urea doped KH2PO4 crystals are investigated. It is found that the crystals with a low electrical conductivity have a high laser damage threshold. It is shown that increase of the resistivity and the laser damage threshold of the crystals realizes by the crystal growth from urea-containing aqueous solutions. The optimum molar value of urea in the solutions is found to be in 0.1–1 M range.

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2010 10th International Conference on Laser and Fiber-Optical Networks Modeling

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