{"title":"基于Delta-Sigma的射频输出CMOS应力传感器","authors":"Yonggang Chen, R. Jaeger, J. Suhling","doi":"10.1109/ASSCC.2006.357896","DOIUrl":null,"url":null,"abstract":"A CMOS stress sensor is merged with a delta-sigma modulator to produce a sensor with a low frequency RF output. A PMOS current mirror with two orthogonal transistors is used as the stress sensor. The delta-sigma modulator generates an output signal that can be processed digitally or monitored by a communications receiver. The frequency shift of the DSBSC output of the modulator is directly proportional to the stress induced mismatch in the sensor cell. A test chip demonstrating the sensor has been fabricated using the 1.5 mum MOSIS CMOS process.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Delta-Sigma Based CMOS Stress Sensor with RF Output\",\"authors\":\"Yonggang Chen, R. Jaeger, J. Suhling\",\"doi\":\"10.1109/ASSCC.2006.357896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS stress sensor is merged with a delta-sigma modulator to produce a sensor with a low frequency RF output. A PMOS current mirror with two orthogonal transistors is used as the stress sensor. The delta-sigma modulator generates an output signal that can be processed digitally or monitored by a communications receiver. The frequency shift of the DSBSC output of the modulator is directly proportional to the stress induced mismatch in the sensor cell. A test chip demonstrating the sensor has been fabricated using the 1.5 mum MOSIS CMOS process.\",\"PeriodicalId\":142478,\"journal\":{\"name\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2006.357896\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
摘要
将CMOS应力传感器与δ - σ调制器合并,产生具有低频RF输出的传感器。采用两个正交晶体管的PMOS电流反射镜作为应力传感器。δ - σ调制器产生一个输出信号,该信号可以被数字处理或由通信接收器监控。调制器DSBSC输出的频移与传感器单元中应力引起的失配成正比。采用1.5 μ m MOSIS CMOS工艺制作了演示传感器的测试芯片。
Delta-Sigma Based CMOS Stress Sensor with RF Output
A CMOS stress sensor is merged with a delta-sigma modulator to produce a sensor with a low frequency RF output. A PMOS current mirror with two orthogonal transistors is used as the stress sensor. The delta-sigma modulator generates an output signal that can be processed digitally or monitored by a communications receiver. The frequency shift of the DSBSC output of the modulator is directly proportional to the stress induced mismatch in the sensor cell. A test chip demonstrating the sensor has been fabricated using the 1.5 mum MOSIS CMOS process.