J. Yedinak, B. Wood, P. Shenoy, G. Dolny, D. Lange, T. Morthorst
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引用次数: 8
摘要
本文通过实验和非等温二维数值模拟两种方法分析了冲穿型igbt的UIS性能。结果表明，UIS的失效机制是由IGBT固有的开基p-n-p结构决定的。通过优化开放基极p-n-p，可以在电流密度超过1000 A/cm/sup /时防止雪崩引起的二次击穿。实验证明了600 V PT-IGBT具有低导通电压，快速开关和>4.5 J/cm/sup 2/ UIS的120 A/cm/sup 2/能力。
Optimizing 600 V punchthrough IGBT's for unclamped inductive switching (UIS)
In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown that the UIS failure mechanism is determined by the open-base p-n-p structure inherent in the IGBT. By optimizing the open base p-n-p, avalanche induced second breakdown can be prevented at current densities in excess of 1000 A/cm/sup 2/. A 600 V PT-IGBT with low on-state voltage, fast switching, and >4.5 J/cm/sup 2/ UIS capability at 120 A/cm/sup 2/ is experimentally demonstrated.
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