J. Purviance, W. Brakensiek, D. Monteith, T. Ferguson
{"title":"高良率放大器的匹配结构设计","authors":"J. Purviance, W. Brakensiek, D. Monteith, T. Ferguson","doi":"10.1109/MWSYM.1988.22054","DOIUrl":null,"url":null,"abstract":"Circuit yield is evaluated for the commonly used narrowband lumped- and distributed-parameter matching structures. It is shown that each structure has highest yield for load impedances in a given region on the Smith chart. A simple design chart is developed which gives the designer a high-yield matching structure for any given load impedance. Two examples illustrate its use.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Matching structures for high yield amplifier design\",\"authors\":\"J. Purviance, W. Brakensiek, D. Monteith, T. Ferguson\",\"doi\":\"10.1109/MWSYM.1988.22054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Circuit yield is evaluated for the commonly used narrowband lumped- and distributed-parameter matching structures. It is shown that each structure has highest yield for load impedances in a given region on the Smith chart. A simple design chart is developed which gives the designer a high-yield matching structure for any given load impedance. Two examples illustrate its use.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"79 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Matching structures for high yield amplifier design
Circuit yield is evaluated for the commonly used narrowband lumped- and distributed-parameter matching structures. It is shown that each structure has highest yield for load impedances in a given region on the Smith chart. A simple design chart is developed which gives the designer a high-yield matching structure for any given load impedance. Two examples illustrate its use.<>
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