{"title":"ZnTe:Cu薄膜和CdS/CdTe/ZnTe太阳能电池的性能","authors":"J. Tang, D. Mao, T. Ohno, V. Kaydanov, J. Trefny","doi":"10.1109/PVSC.1997.654122","DOIUrl":null,"url":null,"abstract":"The effects of Cu doping and post-deposition annealing on the properties of ZnTe thin films and CdS/CdTe solar cells with the ZnTe:Cu/Au back contact were investigated. The structural, compositional and electrical properties of ZnTe films were studied systematically using X-ray diffraction (XRD), electron microprobe analysis, atomic force microscopy (AFM), electrical resistivity and Hall effect measurements. ZnTe films with Cu concentrations of 1-6 at. % were used successfully as a back contact layer, providing fill factors over 0.70. The stability of CdTe/ZnTe/Au cells under accelerated temperature stress tests was investigated. I-V and C-V measurements, scanning Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy (XPS) were used to clarify possible degradation mechanisms. Significant Cu and Te diffusion into Au layer and Au diffusion into ZnTe were observed after annealing.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"34 9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Properties of ZnTe:Cu thin films and CdS/CdTe/ZnTe solar cells\",\"authors\":\"J. Tang, D. Mao, T. Ohno, V. Kaydanov, J. Trefny\",\"doi\":\"10.1109/PVSC.1997.654122\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of Cu doping and post-deposition annealing on the properties of ZnTe thin films and CdS/CdTe solar cells with the ZnTe:Cu/Au back contact were investigated. The structural, compositional and electrical properties of ZnTe films were studied systematically using X-ray diffraction (XRD), electron microprobe analysis, atomic force microscopy (AFM), electrical resistivity and Hall effect measurements. ZnTe films with Cu concentrations of 1-6 at. % were used successfully as a back contact layer, providing fill factors over 0.70. The stability of CdTe/ZnTe/Au cells under accelerated temperature stress tests was investigated. I-V and C-V measurements, scanning Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy (XPS) were used to clarify possible degradation mechanisms. Significant Cu and Te diffusion into Au layer and Au diffusion into ZnTe were observed after annealing.\",\"PeriodicalId\":251166,\"journal\":{\"name\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"volume\":\"34 9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1997.654122\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Properties of ZnTe:Cu thin films and CdS/CdTe/ZnTe solar cells
The effects of Cu doping and post-deposition annealing on the properties of ZnTe thin films and CdS/CdTe solar cells with the ZnTe:Cu/Au back contact were investigated. The structural, compositional and electrical properties of ZnTe films were studied systematically using X-ray diffraction (XRD), electron microprobe analysis, atomic force microscopy (AFM), electrical resistivity and Hall effect measurements. ZnTe films with Cu concentrations of 1-6 at. % were used successfully as a back contact layer, providing fill factors over 0.70. The stability of CdTe/ZnTe/Au cells under accelerated temperature stress tests was investigated. I-V and C-V measurements, scanning Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy (XPS) were used to clarify possible degradation mechanisms. Significant Cu and Te diffusion into Au layer and Au diffusion into ZnTe were observed after annealing.
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