高压金属氧化物薄膜晶体管在交流偏置应力下的劣化

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) Pub Date : 2018-11-01 DOI:10.1109/CAD-TFT.2018.8608113

Yilin Yang, Xiangyuan Yin, Mingxiang Wang, Dongli Zhang

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引用次数: 1

摘要

研究了传统和高金属金属氧化物(EMMO)非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(TFTs)在交流偏压应力下的稳定性。观察到EMMO tft的优越稳定性，并归因于减少的深受体样陷阱态。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Degradation of Elevated-Metal Metal-Oxide Thin-Film Transistors Under AC Bias Stress

Stability of conventional and elevated-metal metal-oxide (EMMO) amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under AC bias stress is investigated. Superior stability of the EMMO TFTs is observed and attributed to the reduced deep acceptor-like trap states.

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2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)

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