{"title":"利用器件模拟器结合正交阵列优化InAlGaAs/lnP MQW激光二极管的设计","authors":"J. Darja, S. Narata, N. Chen, Y. Nakano","doi":"10.1109/NUSOD.2003.1259034","DOIUrl":null,"url":null,"abstract":"With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 /spl mu/m wavelength is illustrated. Prior to the actual simulation, the materials' parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs/lnP MQW laser diodes\",\"authors\":\"J. Darja, S. Narata, N. Chen, Y. Nakano\",\"doi\":\"10.1109/NUSOD.2003.1259034\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 /spl mu/m wavelength is illustrated. Prior to the actual simulation, the materials' parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.\",\"PeriodicalId\":206987,\"journal\":{\"name\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2003.1259034\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1259034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs/lnP MQW laser diodes
With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 /spl mu/m wavelength is illustrated. Prior to the actual simulation, the materials' parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.
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