行为ESD保护建模,实现系统级ESD高效设计

F. Caignet, N. Monnereau, N. Nolhier, M. Bafleur
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引用次数: 11

摘要

对于设备制造商(EM)和半导体供应商来说,在设计阶段预测静电放电(ESD)事件正成为一个具有挑战性的问题,以确保系统级考虑的可修复性。这主要是由于集成电路(IC)技术的萎缩,这降低了鲁棒性水平,增加了故障的概率。在本文中,我们将介绍如何建立考虑ESD保护行为描述的IC模型,以执行系统级ESD仿真。IBIS(输入/输出缓冲信息规范)模型与从传输线脉冲(TLP)测量技术中提取的信息混合在一起,以构建系统仿真。该方法在解决电流传播路径和ic的敏感性的一些案例研究中得到了详细的证明。所提出的模型的主要目标是,它可以被IC供应商和EMs共享,以确保IC可以处理系统级ESD事件。
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Behavioral ESD protection modeling to perform system level ESD efficient design
For both Equipment Manufacturers (EM) and semiconductor suppliers, the prediction of ElectroStatic Discharge (ESD) events into design phase is becoming a challenging issue to insure rehability into system level considerations. This is mainly due to the shrinking of Integrated Circuits (IC) technology, which decreases the robustness level and increase the probability of failures. In this paper, we will present how to build IC's models taking into account behavioral description of ESD protections, to perform system level ESD simulations. The IBIS (Input/output Buffer Information Specification) models are mixed with information extracted from Transmission Line Pulsing (TLP) measurement's techniques to build system simulations. The methodology is detailed and proved in some case studies addressing the current propagation path and the susceptibility of the ICs. The main goal of the proposed model is that it could be shared by IC suppliers and EMs to ensure that ICs can handle system level ESD events.
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