S. Khandelwal, Y. Chauhan, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu
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Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation
We present an efficient approach to model the effects of vertical non-uniform doping in bulk MOSFETs. The impact of vertical non-uniform doping on device characteristics is analyzed through systematic TCAD simulations. The qualitative nature of the observed effects is also confirmed by the experimental data available in the literature. A modeling methodology for these effects is developed on BSIM6 model framework. The proposed model is in good agreement with the TCAD simulations.
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