采用双栅极结构提高双通道e模AlGaN/GaN hemt的击穿电压

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8355947

Yang-Hua Chang, Chien-min Wang

{"title":"采用双栅极结构提高双通道e模AlGaN/GaN hemt的击穿电压","authors":"Yang-Hua Chang, Chien-min Wang","doi":"10.1109/EDSSC.2017.8355947","DOIUrl":null,"url":null,"abstract":"In this study, the characteristics of a double-channel AlGaN/GaN HEMT are improved. Firstly, depletion mode is changed to enhancement mode by changing the thickness of an AlGaN layer, implementing a p-doped region, and changing the material of buffer layer. Secondly, Al ratio in the upper AlGaN layer is optimized to improve the flatness of Gm-VGS curve so that the linearity is improved. Finally, breakdown voltage is increased by using a double-gate structure.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improving breakdown voltage of double-channel E-mode AlGaN/GaN HEMTs using a double-gate structure\",\"authors\":\"Yang-Hua Chang, Chien-min Wang\",\"doi\":\"10.1109/EDSSC.2017.8355947\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the characteristics of a double-channel AlGaN/GaN HEMT are improved. Firstly, depletion mode is changed to enhancement mode by changing the thickness of an AlGaN layer, implementing a p-doped region, and changing the material of buffer layer. Secondly, Al ratio in the upper AlGaN layer is optimized to improve the flatness of Gm-VGS curve so that the linearity is improved. Finally, breakdown voltage is increased by using a double-gate structure.\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8355947\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8355947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本研究中，改进了双通道AlGaN/GaN HEMT的特性。首先，通过改变AlGaN层的厚度，实现p掺杂区域，改变缓冲层的材料，将耗尽模式转变为增强模式。其次，优化AlGaN上层Al的比例，提高Gm-VGS曲线的平整度，从而提高线性度;最后，采用双栅结构提高击穿电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Improving breakdown voltage of double-channel E-mode AlGaN/GaN HEMTs using a double-gate structure

In this study, the characteristics of a double-channel AlGaN/GaN HEMT are improved. Firstly, depletion mode is changed to enhancement mode by changing the thickness of an AlGaN layer, implementing a p-doped region, and changing the material of buffer layer. Secondly, Al ratio in the upper AlGaN layer is optimized to improve the flatness of Gm-VGS curve so that the linearity is improved. Finally, breakdown voltage is increased by using a double-gate structure.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

自引率

0.00%

发文量