低于20秒ECL电路，50 GHz fmax自对准SiGe hbt

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307386

F. Sato, T. Hashimoto, T. Tatsumi, H. Kitahata, T. Tashiro

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引用次数: 18

摘要

本文介绍了一种高fmax自对准SiGe异质结双极晶体管(HBT)技术，该技术基于自对准选择性外延生长技术，包括Ge梯度轮廓和采用BSG侧壁结构的链路基工程。HBT具有超自对准选择性生长SiGe碱基(SSSB)结构。基型设计和两步退火技术在链路基区实现了51 GHz的f/sub /和低片电阻，并实现了高达50 GHz的fmax。利用该SiGe HBT技术实现了19 psec门延迟的ECL电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Sub-20 psec ECL circuits with 50 GHz fmax self-aligned SiGe HBTs

This paper describes a high fmax self-aligned SiGe heterojunction bipolar transistor (HBT) technology which is based on the self-aligned selective epitaxial growth technology including Ge graded profile and link-base engineering using a BSG sidewall structure. The HBT has a Super Self-aligned Selectively grown SiGe Base (SSSB) structure. Base profile design and a 2-step annealing technique have realized a f/sub T/ of 51 GHz and low sheet resistance at the link-base region, and furthermore have accomplished fmax of as high as 50 GHz. ECL circuits of 19 psec gate delay have been achieved by using this SiGe HBT technology.<>

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1992 International Technical Digest on Electron Devices Meeting

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