{"title":"砷化镓x波段薄膜声滤波器","authors":"R. Stokes, J. D. Crawford","doi":"10.1109/MWSYM.1992.187933","DOIUrl":null,"url":null,"abstract":"The semiconductor bulk acoustic resonator (SBAR) is composed entirely of thin films, piezoelectric aluminum nitride, and metal electrode films (primarily aluminum). The authors describe the performance of an SBAR filter which has only 6.1 dB insertion loss at 7.8 GHz (2nd harmonic) and 7.5 dB insertion loss at 11.6 GHz (third harmonic), with fractional bandwidths less than 1%. This filter demonstrates that SBAR technology is practical for X-band filters in MMICs (monolithic microwave integrated circuits).<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"50","resultStr":"{\"title\":\"X-band thin film acoustic filters on GaAs\",\"authors\":\"R. Stokes, J. D. Crawford\",\"doi\":\"10.1109/MWSYM.1992.187933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The semiconductor bulk acoustic resonator (SBAR) is composed entirely of thin films, piezoelectric aluminum nitride, and metal electrode films (primarily aluminum). The authors describe the performance of an SBAR filter which has only 6.1 dB insertion loss at 7.8 GHz (2nd harmonic) and 7.5 dB insertion loss at 11.6 GHz (third harmonic), with fractional bandwidths less than 1%. This filter demonstrates that SBAR technology is practical for X-band filters in MMICs (monolithic microwave integrated circuits).<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"50\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.187933\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.187933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The semiconductor bulk acoustic resonator (SBAR) is composed entirely of thin films, piezoelectric aluminum nitride, and metal electrode films (primarily aluminum). The authors describe the performance of an SBAR filter which has only 6.1 dB insertion loss at 7.8 GHz (2nd harmonic) and 7.5 dB insertion loss at 11.6 GHz (third harmonic), with fractional bandwidths less than 1%. This filter demonstrates that SBAR technology is practical for X-band filters in MMICs (monolithic microwave integrated circuits).<>
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