双脉冲测试分析IGBT导通损耗

P. Tu, Peng Wang, Xiaolei Hu, Chen Qi, S. Yin, M. Zagrodnik
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引用次数: 17

摘要

传统的IGBT导通损耗评估方法是对双脉冲试验数据进行曲线拟合,没有深入了解IGBT导通过程。提出了一种IGBT导通损耗的分析评估方法。该方法采用定性IGBT开关波形和输出特性中的IGBT开关轨迹来分析IGBT导通过程。基于IGBT等效电路模型,导出了导通过程的详细表达式。简化了IGBT开关瞬态控制方程来模拟IGBT导通损耗。用所提出的表达式估计的导通损耗与实验测量值相当吻合。
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Analytical evaluation of IGBT turn-on loss with double pulse testing
Traditional IGBT turn-on loss evaluation methods are curve fitting of double pulse test data without insight of IGBT turn-on process. This paper proposed an analytical evaluation method of IGBT turn-on loss. In the proposed method, a qualitative IGBT switching waveform and an IGBT switching trajectory in output characteristics are used to analyze IGBT turn-on process. The detailed expressions for turn-on process are derived from an IGBT equivalent circuit model. IGBT switching transients governing equations to model IGBT turn-on loss are simplified. The turn-on loss estimated with the proposed expressions matched reasonably well with the experimental measurements.
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