Investigation of spectral responses of interdigitated photodetector based on GaAs:Cr structure

The results of investigation of spectroscopic dependence of absolute current sensitivity of metal-semiconductor-metal (MSM) photodetector on the basis of GaAs, compensated Cr, with interdigitated contact electrodes are presented. Measuring was carry out at a uninterrupted exposure over the range of wave lengths 350–1100 nm at a various bias voltage on a photodetector. It is ascertained, that photodetector have high sensitivity in both fields — fundamental absorption, and in the impurity absorption. It is shown, that at energy of quanta greater 2.1eV and a bias voltage above 3V the effect of intrinsic amplification is watched.