{"title":"hjfet中深阱诱导漏极电流瞬态行为的等效电路模型","authors":"K. Kunihiro, Y. Ohno","doi":"10.1109/GAAS.1994.636982","DOIUrl":null,"url":null,"abstract":"A large-signal HJFET model is developed for deep-trap induced drain-current transient behaviors based on two-dimensional device simulations. In the model, electron capture and emission processes for deep traps are replaced by the currents flowing through a diode and a resistor, which are physically deduced from SRH statistics. The model accurately describes the bias and time dependent nonlinear-characteristics of trapping effects. The influence of the trapping effects on RF switching is also discussed.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"An equivalent circuit model for deep-trap induced drain-current transient behaviors in HJFETs\",\"authors\":\"K. Kunihiro, Y. Ohno\",\"doi\":\"10.1109/GAAS.1994.636982\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A large-signal HJFET model is developed for deep-trap induced drain-current transient behaviors based on two-dimensional device simulations. In the model, electron capture and emission processes for deep traps are replaced by the currents flowing through a diode and a resistor, which are physically deduced from SRH statistics. The model accurately describes the bias and time dependent nonlinear-characteristics of trapping effects. The influence of the trapping effects on RF switching is also discussed.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636982\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An equivalent circuit model for deep-trap induced drain-current transient behaviors in HJFETs
A large-signal HJFET model is developed for deep-trap induced drain-current transient behaviors based on two-dimensional device simulations. In the model, electron capture and emission processes for deep traps are replaced by the currents flowing through a diode and a resistor, which are physically deduced from SRH statistics. The model accurately describes the bias and time dependent nonlinear-characteristics of trapping effects. The influence of the trapping effects on RF switching is also discussed.
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