具有高抗短路能力的- 730V垂直SiC p-MOSFET的实验演示，用于互补逆变器应用

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838391

Junjie An, Masaki Namai, M. Tanabe, D. Okamoto, H. Yano, N. Iwamuro

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引用次数: 6

摘要

首次成功制备了新型p沟道垂直4H-SiC MOSFET。击穿电压在−730 V以上，短路能力比4H-SiC n沟道MOSFET高15%。这是一种适用于高频互补逆变器的优越功率器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Experimental demonstration of −730V vertical SiC p-MOSFET with high short circuit withstand capability for complementary inverter applications

A new p-channel vertical 4H-SiC MOSFET has been successfully fabricated for the first time. Its breakdown voltage is over −730 V and the short circuit capability is 15% higher than that of 4H-SiC n-channel MOSFET. This could be a superior power device applicable for high frequency complementary inverter.

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2016 IEEE International Electron Devices Meeting (IEDM)

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