{"title":"p-GaN/ i-InGaN/n-GaN太阳能电池的模拟","authors":"Chahrazed Boudaoud, A. Hamdoune, Z. Allam","doi":"10.1109/NAWDMPV.2014.6997614","DOIUrl":null,"url":null,"abstract":"The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The direct gap of the InxGa1-xN alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Simulation of p-GaN/ i-InGaN/n-GaN solar cell\",\"authors\":\"Chahrazed Boudaoud, A. Hamdoune, Z. Allam\",\"doi\":\"10.1109/NAWDMPV.2014.6997614\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The direct gap of the InxGa1-xN alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.\",\"PeriodicalId\":149945,\"journal\":{\"name\":\"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAWDMPV.2014.6997614\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAWDMPV.2014.6997614","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
iii -氮化物材料体系为开发高效太阳能电池提供了巨大的潜力。InxGa1-xN合金体系的直接间隙从近红外波段的InN (0.7 eV)不断扩大到中紫外波段的GaN (3.4 eV)。本文利用SILVACO软件模拟了单太阳光照条件下InGaN太阳能电池的性能。
The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The direct gap of the InxGa1-xN alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.
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