一维状态扩展忆阻器的电压-电流微分方程

V. Biolková, Zdeněk Biolek, D. Biolek, Z. Kolka
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引用次数: 1

摘要

扩展忆阻器的端口方程为状态相关的欧姆定律,状态方程描述了扩展忆阻器的动力学特性。其等效模型是忆阻器电压、电流及其导数对时间的微分方程(DE)。本文推导了具有标量(即一维)状态的任意扩展忆阻器DE的一般形式。证明了该方程始终是一个一阶非线性方程。给出了带Joglekar窗口函数的惠普记忆电阻器双曲模型的DEs,以及一些典型的通用记忆电阻器的DEs。
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Voltage-Current Differential Equations of Extended Memristors with One-Dimensional State
The extended memristor is characterized by its port equation as state-dependent Ohm's law and by the state equation describing its dynamics. Its equivalent model is the differential equation (DE) between the memristor voltage, current, and their derivatives with respect to time. The paper presents the derivation of a general form of the DE for arbitrary extended memristors with scalar, i.e.one-dimensional state. It is shown that this DE is always a first-order nonlinear equation. DEs for the hyperbolic model of the Hewlett-Packard memristor with the Joglekar window function and also for some representatives of generic memristors are presented.
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