AlGaN/GaN HEMT的数值噪声模型

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Pub Date : 2004-06-06 DOI:10.1109/MWSYM.2004.1339166

Sungjae Lee, K. Webb

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引用次数: 9

摘要

本文描述了一种模拟晶体管内本征噪声源的数值方法。使用二维数值器件求解器，栅极和漏极噪声电流源的频谱密度及其相关性使用格林函数方法(等效于肖克利的阻抗场方法)进行了评估。AlGaN/GaN hemt的案例研究将数值模拟结果与测量结果进行了比较，显示出良好的一致性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Numerical noise model for the AlGaN/GaN HEMT

A numerical approach to simulate the intrinsic noise sources within transistors is described. Using a 2D numerical device solver, spectral densities for the gate and drain noise current sources and their correlation are evaluated using a Green's function approach, an equivalent of Shockley's impedance field method. Case studies with AlGaN/GaN HEMTs compare the numerical simulation results to those from measurements, showing good agreement.

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2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

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