DC and RF performance analysis of AlGaN/GaN based HEMT

In this work, a AlGaN/GaN based High Electron Mobility Transistor with 3 μm gate length is designed and simulated with the Silvaco TCAD software which is passivated by SiO2. A drain current of 658 mA/mm is found for a gate voltage of 2.5 V. The transconductance of the device is 123 mS/mm at the gate voltage of 2V. A maximum output conductance of 163 mS/mm is obtained at the drain voltage of 45 V. The gate to source and gate to drain capacitance is calculated for the device. The cutoff frequency of the device is 2.6 GHz and the maximum frequency oscillation of the device is 9.8 GHz. A minimum noise figure of 11.6 dB is obtained at the operating frequency 5 GHz. Intrinsic time delay of the device is 122 ps. These properties prove that the AlGaN/GaN based HEMT is perfect for high power applications as well as microwave applications.