基于CMOS 90纳米工艺的增益11.9 dB的v波段功率放大器

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2012-11-01 DOI:10.1109/RFIT.2012.6401600

M. Wu, Yen-Chung Chiang

{"title":"基于CMOS 90纳米工艺的增益11.9 dB的v波段功率放大器","authors":"M. Wu, Yen-Chung Chiang","doi":"10.1109/RFIT.2012.6401600","DOIUrl":null,"url":null,"abstract":"In this paper, a three-stage power amplifier (PA) designed for V-band applications is presented. The proposed PA adopts common-source topology for each stage and is implemented in the CMOS 90-nm process technology. This V-band PA achieves a small signal gain of 11.9dB and a saturated output power of 7.6dBm at the 60GHz operating frequency. The measured peak power added efficiency (PAE) is 4.77%, and its OP1dB is 5dBm. The power consumption of the proposed PA is 97mW from the 1.2V voltage supply.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A V-band power amplifier with 11.9 dB gain in CMOS 90-nm process technology\",\"authors\":\"M. Wu, Yen-Chung Chiang\",\"doi\":\"10.1109/RFIT.2012.6401600\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a three-stage power amplifier (PA) designed for V-band applications is presented. The proposed PA adopts common-source topology for each stage and is implemented in the CMOS 90-nm process technology. This V-band PA achieves a small signal gain of 11.9dB and a saturated output power of 7.6dBm at the 60GHz operating frequency. The measured peak power added efficiency (PAE) is 4.77%, and its OP1dB is 5dBm. The power consumption of the proposed PA is 97mW from the 1.2V voltage supply.\",\"PeriodicalId\":187550,\"journal\":{\"name\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2012.6401600\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2012.6401600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文介绍了一种专为v波段应用而设计的三级功率放大器。所提出的PA各级采用共源拓扑，采用CMOS 90纳米制程技术实现。该v波段扩音器在60GHz工作频率下实现了11.9dB的小信号增益和7.6dBm的饱和输出功率。测量的峰值功率附加效率(PAE)为4.77%，其OP1dB为5dBm。在1.2V电压下，所提出的PA的功耗为97mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A V-band power amplifier with 11.9 dB gain in CMOS 90-nm process technology

In this paper, a three-stage power amplifier (PA) designed for V-band applications is presented. The proposed PA adopts common-source topology for each stage and is implemented in the CMOS 90-nm process technology. This V-band PA achieves a small signal gain of 11.9dB and a saturated output power of 7.6dBm at the 60GHz operating frequency. The measured peak power added efficiency (PAE) is 4.77%, and its OP1dB is 5dBm. The power consumption of the proposed PA is 97mW from the 1.2V voltage supply.

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2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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