{"title":"用于5G mimo应用的SOI过程中48 dBm峰值功率射频开关","authors":"Venkata N. K. Malladi, Monte Miller","doi":"10.1109/SIRF.2019.8709096","DOIUrl":null,"url":null,"abstract":"This paper presents an analysis & comparison of GaAs and SOI processes for RF switch designs with applications aimed at 5G massive MIMO RF front end applications. An RF switch in SOI 130 nm process is presented. The switch operates from 0.1-3 GHz and achieves 48 dBm of 1 dB compression point (peak power), 0.5 dB Insertion Loss, 26 dB of isolation at 2.5 GHz.","PeriodicalId":356507,"journal":{"name":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A 48 dBm peak power RF switch in SOI process for 5G mMIMO applications\",\"authors\":\"Venkata N. K. Malladi, Monte Miller\",\"doi\":\"10.1109/SIRF.2019.8709096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an analysis & comparison of GaAs and SOI processes for RF switch designs with applications aimed at 5G massive MIMO RF front end applications. An RF switch in SOI 130 nm process is presented. The switch operates from 0.1-3 GHz and achieves 48 dBm of 1 dB compression point (peak power), 0.5 dB Insertion Loss, 26 dB of isolation at 2.5 GHz.\",\"PeriodicalId\":356507,\"journal\":{\"name\":\"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"79 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2019.8709096\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2019.8709096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 48 dBm peak power RF switch in SOI process for 5G mMIMO applications
This paper presents an analysis & comparison of GaAs and SOI processes for RF switch designs with applications aimed at 5G massive MIMO RF front end applications. An RF switch in SOI 130 nm process is presented. The switch operates from 0.1-3 GHz and achieves 48 dBm of 1 dB compression point (peak power), 0.5 dB Insertion Loss, 26 dB of isolation at 2.5 GHz.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
