{"title":"场发射二极管静电计算的象电荷法","authors":"J. Sáenz, G. Mesa","doi":"10.1109/IVMC.1996.601785","DOIUrl":null,"url":null,"abstract":"We present a method to calculate the interaction energies of a charge placed between a metallic tip of arbitrary shape and a sample surface. The basic idea is to replace the electrodes by a set of image charges. These charges are adjusted in order to fit the boundary conditions on the surfaces. As an application of the method, we describe the field characteristics of a field-emission diode as a function of the gap between the electrodes for different tip shapes. The three-dimensional potential barrier (including image corrections) for electron field emission is also calculated.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"178 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Image charge method for electrostatic calculations in field emission diodes\",\"authors\":\"J. Sáenz, G. Mesa\",\"doi\":\"10.1109/IVMC.1996.601785\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a method to calculate the interaction energies of a charge placed between a metallic tip of arbitrary shape and a sample surface. The basic idea is to replace the electrodes by a set of image charges. These charges are adjusted in order to fit the boundary conditions on the surfaces. As an application of the method, we describe the field characteristics of a field-emission diode as a function of the gap between the electrodes for different tip shapes. The three-dimensional potential barrier (including image corrections) for electron field emission is also calculated.\",\"PeriodicalId\":384104,\"journal\":{\"name\":\"9th International Vacuum Microelectronics Conference\",\"volume\":\"178 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Vacuum Microelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVMC.1996.601785\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Vacuum Microelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVMC.1996.601785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Image charge method for electrostatic calculations in field emission diodes
We present a method to calculate the interaction energies of a charge placed between a metallic tip of arbitrary shape and a sample surface. The basic idea is to replace the electrodes by a set of image charges. These charges are adjusted in order to fit the boundary conditions on the surfaces. As an application of the method, we describe the field characteristics of a field-emission diode as a function of the gap between the electrodes for different tip shapes. The three-dimensional potential barrier (including image corrections) for electron field emission is also calculated.
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