超材料中延迟电磁耦合辐射反应电路分析

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Iet Circuits Devices & Systems Pub Date : 2021-11-26 DOI:10.1049/cds2.12104
Ryoma Nakata, Takashi Hisakado, Tohlu Matsushima, Osami Wada
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引用次数: 0

摘要

由于辐射在高频电路中是必不可少的,例如在超材料和等离子体中使用的电路,因此辐射损耗的研究很重要。本文研究了电磁耦合迟滞电路中的辐射损耗特性。用带线金属球的结构来演示超材料等效电路,其中电荷和电流分别存在于球和线上。定义了具有延迟电磁耦合的电感矩阵和电位系数矩阵来处理辐射反应。然后,根据导线和球体的拓扑结构,建立了考虑延迟的等效电路方程,讨论了电感和电容元件在谐振电路中的损耗。在此基础上,论证了迟滞耦合引起的谐振频率与辐射损耗之间的关系,阐明了迟滞耦合与带传输线耦合的区别。此外,我们指出延迟耦合在一维谐振电路阵列的色散曲线上产生奇点。因此,具有延迟耦合的电路产生了没有延迟电路所不能表示的辐射反应的新特性。这种电路分析有望为诸如超材料和等离子体等课题的研究提供新的方面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Circuit analysis of radiation reaction in metamaterials by retarded electromagnetic coupling

Because radiation is essential in high-frequency circuits, such as those used in metamaterials and plasmonics, the investigation of radiation loss is important. This study describes the characteristics of radiation loss, which is a radiation reaction in circuits with retarded electromagnetic couplings. The structure of wired metallic spheres is used to demonstrate metamaterial equivalent circuits, where charges and current exist on the spheres and wires, respectively. An inductance matrix and a potential coefficient matrix with retarded electromagnetic couplings are defined to address the radiation reaction. Subsequently, based on the topology of the wires and spheres, an equivalent circuit equation with retardation is formulated to discuss the losses in the resonant circuit caused by the inductive and capacitive elements. Thereafter, the relationship between the resonant frequency and radiation loss caused by the retarded couplings is demonstrated and the difference between the retarded couplings and couplings with transmission lines is clarified. Furthermore, we indicate that retarded coupling generates singularity on a dispersion curve for a one-dimensional array of resonant circuits. Thus, the circuit with retarded couplings generates novel characteristics of radiation reactions that are not represented by the circuit without retardation. This circuit analysis is expected to afford new aspects in studies on topics, such as metamaterials and plasmonics.

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来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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