{"title":"inp基异质结双极晶体管取向效应的原子力显微镜分析","authors":"D. Sachelarie, S. Stanciu, G. Stanciu","doi":"10.1109/ICTONMW.2007.4446981","DOIUrl":null,"url":null,"abstract":"The influence of the mesa surface, imaged by atomic force microscopy (AFM), on the current gain of InP/InGaAs heterojunction bipolar transistor for three emitter crystallographic orientations was reported. The three-dimensional surface topography of the samples was characterized with an AFM. The current gain versus collector current for three emitters were obtained.","PeriodicalId":366170,"journal":{"name":"2007 ICTON Mediterranean Winter Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomic force microscopy analysis of orientation effect on InP-based heterojunction bipolar transistors\",\"authors\":\"D. Sachelarie, S. Stanciu, G. Stanciu\",\"doi\":\"10.1109/ICTONMW.2007.4446981\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of the mesa surface, imaged by atomic force microscopy (AFM), on the current gain of InP/InGaAs heterojunction bipolar transistor for three emitter crystallographic orientations was reported. The three-dimensional surface topography of the samples was characterized with an AFM. The current gain versus collector current for three emitters were obtained.\",\"PeriodicalId\":366170,\"journal\":{\"name\":\"2007 ICTON Mediterranean Winter Conference\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 ICTON Mediterranean Winter Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTONMW.2007.4446981\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 ICTON Mediterranean Winter Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTONMW.2007.4446981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Atomic force microscopy analysis of orientation effect on InP-based heterojunction bipolar transistors
The influence of the mesa surface, imaged by atomic force microscopy (AFM), on the current gain of InP/InGaAs heterojunction bipolar transistor for three emitter crystallographic orientations was reported. The three-dimensional surface topography of the samples was characterized with an AFM. The current gain versus collector current for three emitters were obtained.
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