一种新的相变存储单元仿真器设计

M. Ong, N. El-Hassan, T. N. Kumar, H. Almurib
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引用次数: 1

摘要

本文提出了一种新颖的基于LTSPICE的相变存储器(PCM)单元仿真器模型,该模型仅使用现成的离散电子元件。基于电学的模型不仅模拟了连续的电阻变化(对应于非晶相和结晶相),还模拟了编程过程中整个电池的温度分布,同时评估了编程时间的影响。所设计的仿真电路能够充分表征保持电压,生成PCM单元的标准I-V特性曲线,并具有实际PCM元件的工作特性。仿真结果与实验数据吻合较好。
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A novel emulator design for phase change memory cell
This paper presents a novel LTSPICE based Phase Change Memory (PCM) cell emulator model, using only off the shelf discrete electronic components. The electrical based model simulates not only the continuous resistance change (as corresponding to amorphous and crystalline phases), but also the temperature profile across the cell during programming, while assessing the impact of the programming time. The designed emulator circuit is able to fully characterize the holding voltage and generate the standard I-V characteristic curve of a PCM cell, and possesses the operational features of an actual PCM element. The simulation results are found to be in close agreement to experimental data.
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