基于0.18µm CMOS技术的超宽带系统LNA设计与仿真

Dheeraj Kalra, Manish Kumar, Abhay Chaturvedi, Alok Kumar
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引用次数: 0

摘要

本文提出了采用0.18μm CMOS技术的超宽带LNA。该电路在3.1GHz ~ 10.6GHz频率范围内进行了仿真。采用阻性反馈拓扑可以改善电路的噪声系数。源退化技术有助于平衡寄生电容的影响。该电路采用级联和级联方式连接晶体管,有助于增益的增加。仿真结果表明,该电路在8.665GHz时的最高增益为19.982dB,并且在整个频率范围内增益近似恒定。3.1GHz时最小噪声系数为1.270dB, 10.6GHz时最大噪声系数为3.4dB。
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Design and simulation of LNA using 0.18 µm CMOS technology for UWB systems
This paper presents the UWB LNA using 0.18μm CMOS technology. The proposed circuit is simulated for the frequency range of 3.1GHz to 10.6GHz. By applying the resistive feedback topology, the noise figure of the circuit can be improved. The source degeneration technique helps in balancing the effect of parasitic capacitance. The proposed circuit has the cascade and cascode connections of the transistors helped in the increment of the gain. The simulation results shows that the highest gain of the circuit is 19.982dB at 8.665GHz & the gain is approximately constant throughout the frequency range. The minimum noise figure is 1.270dB at 3.1GHz and the maximum noise figure is 3.4dB at 10.6GHz.
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