J. Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu
{"title":"Z2-FET:具有门控迟滞的零斜率开关器件","authors":"J. Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu","doi":"10.1109/VLSI-TSA.2012.6210113","DOIUrl":null,"url":null,"abstract":"We present a novel switching device named Z<sup>2</sup>-FET that features zero subthreshold swing and zero impact ionization. The device is built in fully-depleted silicon-on-insulator (FD-SOI) technology and is demonstrated to switch sharply with the subthreshold slope (SS) <; 1 mV/dec and an I<sub>ON</sub>/I<sub>OFF</sub> current ratio >; 10<sup>10</sup>. The device further shows large hysteresis in drain current-drain voltage (I<sub>D</sub>-V<sub>D</sub>) domain with the turn-on voltage (V<sub>ON</sub>) linearly controlled by gate voltage (V<sub>G</sub>). Simulation confirms that the operation of the device is determined by the positive feedback between the flow of carriers and their injection barriers.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Z2-FET: A zero-slope switching device with gate-controlled hysteresis\",\"authors\":\"J. Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu\",\"doi\":\"10.1109/VLSI-TSA.2012.6210113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a novel switching device named Z<sup>2</sup>-FET that features zero subthreshold swing and zero impact ionization. The device is built in fully-depleted silicon-on-insulator (FD-SOI) technology and is demonstrated to switch sharply with the subthreshold slope (SS) <; 1 mV/dec and an I<sub>ON</sub>/I<sub>OFF</sub> current ratio >; 10<sup>10</sup>. The device further shows large hysteresis in drain current-drain voltage (I<sub>D</sub>-V<sub>D</sub>) domain with the turn-on voltage (V<sub>ON</sub>) linearly controlled by gate voltage (V<sub>G</sub>). Simulation confirms that the operation of the device is determined by the positive feedback between the flow of carriers and their injection barriers.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210113\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Z2-FET: A zero-slope switching device with gate-controlled hysteresis
We present a novel switching device named Z2-FET that features zero subthreshold swing and zero impact ionization. The device is built in fully-depleted silicon-on-insulator (FD-SOI) technology and is demonstrated to switch sharply with the subthreshold slope (SS) <; 1 mV/dec and an ION/IOFF current ratio >; 1010. The device further shows large hysteresis in drain current-drain voltage (ID-VD) domain with the turn-on voltage (VON) linearly controlled by gate voltage (VG). Simulation confirms that the operation of the device is determined by the positive feedback between the flow of carriers and their injection barriers.
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