{"title":"基于hf的ReRAM器件电阻性开关的现象学模型","authors":"S. Guitarra, L. Trojman, L. Raymond","doi":"10.1109/ETCM.2018.8580284","DOIUrl":null,"url":null,"abstract":"This paper presents the current-voltage (I–V) characteristics of HfO2-based Resistive Random Access Memories (ReRAM). A statistical analysis of the main electrical parameters of the set and reset switching is done and compared among devices of different areas. With this experimental evidence, a phenomenological model for the resistive switching mechanism in bipolar memories is proposed. This model not only captures the electrical response, but also explains the stochastic behavior reported in this kind of devices.","PeriodicalId":334574,"journal":{"name":"2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A phenomenological model of the resistive switching for Hf-based ReRAM devices\",\"authors\":\"S. Guitarra, L. Trojman, L. Raymond\",\"doi\":\"10.1109/ETCM.2018.8580284\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the current-voltage (I–V) characteristics of HfO2-based Resistive Random Access Memories (ReRAM). A statistical analysis of the main electrical parameters of the set and reset switching is done and compared among devices of different areas. With this experimental evidence, a phenomenological model for the resistive switching mechanism in bipolar memories is proposed. This model not only captures the electrical response, but also explains the stochastic behavior reported in this kind of devices.\",\"PeriodicalId\":334574,\"journal\":{\"name\":\"2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ETCM.2018.8580284\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETCM.2018.8580284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A phenomenological model of the resistive switching for Hf-based ReRAM devices
This paper presents the current-voltage (I–V) characteristics of HfO2-based Resistive Random Access Memories (ReRAM). A statistical analysis of the main electrical parameters of the set and reset switching is done and compared among devices of different areas. With this experimental evidence, a phenomenological model for the resistive switching mechanism in bipolar memories is proposed. This model not only captures the electrical response, but also explains the stochastic behavior reported in this kind of devices.
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