WLCSP和倒装芯片碰撞技术

A. Strandjord, T. Teutsch, A. Scheffler, T. Oppert, G. Azdasht, E. Zakel
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引用次数: 2

摘要

传统上,WLCSP凸起是通过使用改良的表面贴装模板打印机将预成型的焊锡球通过金属模板滴到硅片上来生产的。与这些打印机相关的刮墨刀已经改装了一个特殊的固定装置,在这个固定装置中,球体通过一个狭窄的槽被重力送入。同样的模板打印机通常用于在球体滴下之前将助焊剂涂在晶圆片上。该技术适用于许多应用,但与该技术相关的几个问题限制了其在大批量和高产量应用中的广泛应用。这些限制包括:1)可以掉落的球体尺寸有一个实际的下限;2)开槽夹具和晶圆之间的密封可能失效,导致所有球体释放到工具中(通常称为爆裂或逃逸);3)产量在统计上很低。倒装芯片的凸起传统上是通过电镀或粘贴印刷工艺生产的。这两种技术已经在世界各地的许多工厂大量应用于PdSn碰撞。由于高昂的资金和运营成本,电镀技术在较小的设施中使用有些限制。此外,像SnAgCu这样的三元合金很难得到一致的结果。也有一个实际的上限,以碰撞的大小,可以产生,和大多数应用罕见的小间距碰撞。粘贴打印技术在合金成分方面非常通用,但对于100μm高的凸起,其间距限制在200μm左右。一项新的WLCSP技术有望消除WLCSP和倒装芯片的这些限制,这就是晶圆级焊料球体转移(也称为Gang Ball Placement)。该技术使用带图案的真空板同时拾取所有预制焊锡球,光学检查产量,然后将其转移到晶圆上。本文将讨论该工艺及生产WLCSP凸点的工艺参数。测量了每小时25到30片晶圆的吞吐量水平。将300μm球体放置在200mm晶圆上,约80000个I/ o,产率损失小于10ppm。在半导体晶圆上放置60μm倒装芯片大小的球体也观察到类似的产量。
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WLCSP and Flip Chip bumping technologies
WLCSP bumps have traditionally been produced by dropping preformed solder spheres through a metal template onto silicon wafers using modified surface mount stencil printers. The squeegee blades associated with these printers have been retrofitted with a special fixture in which spheres are gravity feed down through a narrow slot. This same stencil printer is often used to apply the flux to the wafer just prior to sphere dropping. This technique is applicable for many applications but there are several issues are associated with this technology that limit its widespread use in high volume and high yield applications. These limitations include: 1) there is a practical lower limit to the size of sphere that can be dropped, 2) the seal between the slotted fixturing and the wafer can fail, causing a release of all the spheres into the tool (often referred to as bursts or escapes), and 3) the yields are statistically low. Flip Chip bumps have traditionally been produced by electroplating or paste printing processes. Both technologies have been implemented in high volumes for PdSn bumping at many facility across the world. The electroplating technique is somewhat limited for use in smaller facilities due to the high capital and operation costs. In addition, ternary alloys, like SnAgCu are difficult to plate with consistent results. There is also a practical upper limit to the size of the bump that can be produced, and most applications rare for fine pitch bumping.. The paste printing technologies are very versatile with respect to the alloy composition that can be use, but is limited to pitches around 200μm for 100μm tall bumps. One new WLCSP technology that is showing high promise toward eliminating these limitations for both WLCSp and Flip Chip, is Wafer Level Solder Sphere Transfer (also called Gang Ball Placement). This technology uses a patterned vacuum plate to simultaneous pick up all of the preformed solder spheres, optically inspect for yield, and then transfer them over to the wafer. This paper will discuss this technology and the process parameters for producing WLCSP bumps. Throughput levels of 25 to 30 wafers per hour were measured. Yield losses of less than 10ppm were realized for placing 300μm spheres onto 200mm wafers with ~80,000 I/Os. Similar yields have been observed for placing 60μm flip chip sized spheres onto semiconductor wafers.
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